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Future phases of work involve using InGaN with energy gap corresponding to visible light 19 Use of InGaN in SAW sensors – Bandgap of InGaN ranges from 1.9 eV (InN) to 3.4 eV (GaN) and can thus be useful to span most of the visible spectrum (400-700 nm) – Theoretical modeling and calculations for InGaN layers on c-sapphire predict InGaN compounds to have lower SAW velocity and higher electromechanical coupling coefficients than GaN Risks and Benefits • Novel aspects of this project: – Sensors work at high frequencies and can be read out wirelessly without intricate circuitry – Simple planar design of the sensor – Risks/challenges: – Obtaining high quality 2-3 um thick films of InGaN on sapphire – Potential applications & benefits: ― Different IDT widths imply different frequencies of operation – unique signatures at the device level ― The visible light sensors will then be investigated for use in visible light communication and adaptive lighting systems ―
In addition, this presentation contains discussion regarding sensor design, photodetectors, control system, communication, and light sensors.