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Photolithography with image definitions in the sub micron range are used to produce the KTY temperature sensor. A double layer of Oxide and Nitride on the chip surface serves as an insulation film. After deposition of the contact areas, this is again covered with plasma nitride, only that over the contact point being etched away to allow bonding. The chip produced in this process is thereby fully passivated against environmental influences. In order to increase the yield of chips per wafer which fall into the tightest possible tolerance band, neutron activated material is used in the production of the KTY sensors. In this doping method the silicon wafer is implanted with neutrons in a nuclear reactor which change Si-atoms into P-atoms.
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