Inside the paper we can get things such as circuits, sensors, current sensor, microelectronics reliability, and power supply. Many discussion around current, detection, design, and circuit are presented inside the paper.
This paper contains information regarding output, concentration, device, and transient detection. Here are chosen from the paper:
Available online at www.sciencedirect.com Microelectronics Reliability 48 (2008) 710–715 www.elsevier.com/locate/microrel Bulk built in current sensors for single event transient detection in deep-submicron technologies Gilson Wirth * Electrical Engineering Department, UFRGS – Universidade Federal do Rio Grande do Sul, Av. 4 shows that the voltage at the drain terminal reaches a maximum (of about 60% of VDD for the 90 nm technology and VDD for the 65 nm technology) and slowly starts to return to ground, as the conductive channel between drain and substrate is extinguished and the drain circuit node is pulled down to ground G. As discussed in , the bulk-BICS sensitivity may be adjusted by proper sizing of transistors M1, M2 and M3 of the bulk-BICS, or by using improved bulk-BICS designs.
Even more, this paper tells you more around threshold voltages, reliability, simulation time, and current sensors.