Paper About Fabrication and Testing of Single Crystalline 3C-Sic Piezoresistive Pressure Sensor

In this paper the reader can find info regarding process, piezoresistive pressure, output, piezoresistor, and temperature. Many explanation regarding fabrication, sensor, the pressure sensor, pressure, and schematic are presented inside this paper.

The paper contains info related to sensors, transducers, piezoresistive, sensitivity, and piezoresistors. Here are chosen from the paper:

In order to 3C-SiC Si handle wafer overcome the characteristic warpage of Si wafers caused by the thermal mismatch between 3C-SiC and Si, the Si handle wafer was thinned to 250 µm SiO2 grown on the SiC film using backside lapping and polishing followed by KOH etching to obtain a compliant substrate for 3C-SiC wafer bonding. The handle wafer was then thinned by mechanical lapping, then etched away in KOH 3C-SiC Si handle wafer lapped and etched leaving the exposed 3C-SiC film on the Si device wafer, but electrically isolated from the membrane 1.5 µ m by a 1.5 µm-thick SiO 2 layer.

Giving more content, this paper explains info things like pressure sensor, piezoresistive pressure sensor, pressure sensors, micromachining techniques, and the pressure sensors.

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