Silicon Temperature Sensor

The technical note presents things around specific resistivity, resistance value, band, resistance sensor, conventional spreading, silicon, sensor resistance, layer, resistance, and doping. Many discussion such as lead, resistance band, oxide mask, sensor, temperature, oxide, conventional spreading resistance, semiconductor, range, and current are described inside the technical note.

In the technical note you can learn explanation such as measuring point, temperatures, steady state operation, sensor chip, point, doping level, temperature sensor, specific resistance, resistance temperature sensor, and layer metalisation. Below are selected from the technical note:

Photolithography with image definitions in the sub micron range are used to produce the KTY temperature sensor. A double layer of Oxide and Nitride on the chip surface serves as an insulation film. After deposition of the contact areas, this is again covered with plasma nitride, only that over the contact point being etched away to allow bonding. The chip produced in this process is thereby fully passivated against environmental influences. In order to increase the yield of chips per wafer which fall into the tightest possible tolerance band, neutron activated material is used in the production of the KTY sensors. In this doping method the silicon wafer is implanted with neutrons in a nuclear reactor which change Si-atoms into P-atoms.

Giving more content, this technical note explains information such as lead frame, high temperature, multi layer, multi layer metalisation, resistance temperature, temperature deviation, method, spreading resistance temperature, spreading resistance sensor, and crystal.

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